The TPS65296 integrates two synchronous buck converters (VDD1 and VDD2) and a 1.5-A LDO (VDDQ). The TPS65296 employs D-CAP3TM mode with 600-kHz switching frequency for fast transient, good load/ line regulation, and support for ceramic output capacitors without an external compensation circuit.
TPS65296 data sheet, product information and support | TI.com
The TPS65296 provides rich functions as well as good efficiency with internal low Rdson power MOSFETs. It supports flexible power state control, placing VDDQ at high-Z in S3 and discharging VDD1, VDD2, and VDDQ in S4/S5 state. Full protection features include OVP, UVP, OCP, UVLO and thermal shutdown protection.
sdram - Electrical Engineering Stack Exchange
Nov 10, 2020 · LPDDR4X lowered VDDQ to 0.6 V, keeping VDD2 at 1.1 V and VDD1 at 1.8 V. LPDDR5 created two possible values for VDD2, 0.9 V (low) or 1.05 V (high), depending on the frequency the memory is running, also allowing VDDQ to be between 0.3 V and 0.5 V.
CKE termination when using Versal Prime's LPDDR4X
Oct 7, 2024 · Note: If terminating to VDDQ, ensure VDDQ rail can sink current. The terminating circuit is shown in Figure 27. Figure 27 shows the termination circuit, but there is no 160Ω to GND/160Ω to VDD2 (1.1V) in the LPDDR4X picture.
Low Power DDR4/4X SDRAM - Mobile DRAM - Winbond
The LPDDR4X SDRAM is a low variant of LPDDR4 DRAM optimized for next-generation applications. LPDDR4 includes two series: the JEDEC defined LPDDR4X (VDDQ voltage 0.6V) and LPDDR4 (VDDQ voltage 1.1V). As for data transmission rate, the product series covers 3200MT/s, 3733MT/s, or even reaches 4266MT/s.
Kingston LPDDR4 DRAM for embedded applications Kingston discrete LPDDR4 DRAM is designed to meet the needs of embedded applications and offers a high-speed option with lower power consumption.
Mobile Memory: LPDDR, Wide I/O - JEDEC
In LPDDR4X, the I/O supply voltage (VDDQ) is reduced from 1.1 V to 0.6 V. This 40% voltage reduction leads to much lower power usage when sending and receiving data from the memory device, which is particularly beneficial for smartphones and other handheld devices.
ISSI LPDDR4/4X Product Features: • Low voltage core and I/O: VDD1 = 1.8V VDD2 = 1.1V VDDQ = 1.1V (LPDDR4) or 0.6V (LPDDR4X) • Frequency range: 10MHz to 2133MHz (date rate range: 20MT/s to 4266MT/s per I/O) • 8 internal banks per channel for concurrent operation • Programmable Read and Write Latencies
It supports flexible power state control, placing VDDQ at high-Z in S3 and discharging VDD1, VDD2, and VDDQ in S4/S5 state. Full protection features include OVP, UVP, OCP, UVLO and thermal shutdown protection.
Micron Technology LPDDR4/4X SDRAM - Micron -Macnica
LPDDR4/4X SDRAM products are volatile memory devices that are the fourth generation of LPDDR, a low-power DDR standard. LPDDR4 has a derivative standard, LPDDR4X, which further reduces power consumption by lowering the I/O voltage (VDDQ) from 1.1 V to 0.6 V.
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