Doping limitations, either p-type or n-type, in many compound semiconductors, such as p-type doping in CdTe and GaN, and ...

Midsummer, the Swedish developer of CIGS thin film solar cells and production machinery, has received an order worth €13.1m ...

The Singapore-MIT Alliance for Research and Technology (SMART) has launched a new interdisciplinary research group focused on ...

GaN and SiC specialist Navitas Semiconductor has announced its unaudited financial results for the first quarter ended March 31, 2025.

Nexperia has announced a range automotive-qualified SiC MOSFETs with RDS (on) values of 30, 40 and 60 mΩ. These devices ...

Aixtron's G10-AsP system is widely used for Photonic Integrated Circuit (PIC) production. The platform is designed for ...

A collaborative research team from the Hong Kong University of Science and Technology (HKUST) and the Hong Kong Polytechnic ...

The EasyPACK CoolGaN module integrates 650 V CoolGaN power semiconductors with low parasitic inductances, achieved through ...

Efficient Power Conversion (EPC) has announced the availability of the EPC2366, a 40V, 0.8 mΩ GaN device designed to displace ...

Compound semiconductors will be critical to helping the UK achieve its AI action plan, driving economic growth and ...

AIXTRON SE has announced it is supplying SMART Photonics, a Netherlands-based InP PIC foundry, with its new G10-AsP system. The MOCVD solution for high-volume production of GaAs/InP materials will ...

As III-V Epi celebrates its fifth birthday, the UK-based company says it has demonstrated consistent growth, establishing its ...