The chipmaker will shed light on a series of changes it's making to transistors that ideally will keep a lid on the growing problem of power consumption. Michael Kanellos is editor at large at CNET ...

Metal Oxide Silicon Field Effect Transistors (MOSFETs), Insulated Gate Bipolar Transistors (IGBTs), Bipolar Junction Transistors (BJTs), diodes, and application specific multi-transistor packaged ...

Duke engineers show how a common device architecture used to test 2D transistors overstates their performance prospects in real-world devices.

Power Transistor Market · GlobeNewswire Inc. Dublin, Jan. 29, 2026 (GLOBE NEWSWIRE) -- The "Power Transistor Market Report 2026" has been added to ResearchAndMarkets.com's offering. The report ...

Herein, wafer-scale 8-nm films of Sn-doped gallium oxide (Ga 2 O 3) were fabricated via physical vapor deposition at room temperature. Using these films, 8-nm Sn-doped Ga 2 O 3 field-effect ...

The theoretical advantages of GaN-based power transistors are now being realized in mainstream system designs. Power supplies for data centers and telecom switching racks are two application areas ...

Semiconducting CNTs possess several advantages over traditional silicon, including higher carrier mobility and better electrostatic control at nanoscale dimensions. These properties make them ...

BENGALURU: Researchers from the Indian Institute of Science (IISc) have reported a breakthrough in the design of gallium nitride (GaN) power transistors, a development that could help accelerate the ...