To migrate these devices from laboratory research to large-scale industrial fabrication is still a challenge given the industry's massive investment in silicon technologies and infrastructure. Silicon ...
YOKOHAMA, Japan, Aug. 7, 2023 /PRNewswire/ -- Fujitsu Semiconductor Memory Solution Limited announced the launch of an I2C-interface 512Kbit FeRAM with automotive grade, MB85RC512LY. Evaluation ...
TOKYO — A new metal organic chemical vapor deposition (MOCVD) system developed by M. Watanabe & Co., Ltd., could provide a production breakthrough for emerging ferroelectric random access memory ...
Oki Electric Industry Co. Ltd. and Symetrix Corp. have embarked on a cooperation and licensing agreement for the joint commercialization of non-destructive read out (NDRO) ferroelectric RAM (FeRAM), ...
The IEEE International Electron Devices Meeting (IEDM) is always a source of interesting information on the latest developments in solid-state technology and in particular solid state memory and ...
This article covers some more interesting content from the 2021 IEEE IEDM and the MRAM Forum that followed the IEDM. We look at some papers from the conference covering magnetic random-access memory ...
The Tokyo Institute of Technology, Fujitsu Laboratories, and Fujitsu Limited have jointly developed a new material for non-volatile ferroelectric RAM (FeRAM). The material is a modified composition of ...
The MB85RC512LY is a non-volatile memory with 512Kbit memory density and operates at a low power supply voltage from 1.7V to 1.95V. It features extremely low operating current such as a maximum of ...
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